DXT3906 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for general purpose switching and amplifier applications. pinning 1 = base 2 = collector 3 = emitter sot-89 dimensions in inches and (millimeters) .063(1.60).055(1.40) .066(1.70).059(1.50) .167(4.25).159(4.05) .016(0.41).014(0.35) .120(3.04) .117(2.96) .181(4.60).173(4.40) .060(1.52).058(1.48) .020(0.51).014(0.36) .102(2.60).095(2.40) 1 2 3 characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -40 v emitter-base voltage vebo -5 v collector current ic -200 ma total power dissipation pd 1 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -40 - - v ic=-100ma collector-emitter breakdown voltage bvceo -40 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icex - - -50 na vce =-30v, vbe=-3v collector-emitter saturation voltage (1) vce(sat)1 - - -0.25 v ic=-10ma, ib=-1ma vce(sat)2 - - -0.4 v ic=-50ma, ib=-5ma base-emitter saturation voltage (1) vbe(sat)1 -0.65 - -0.85 v ic=-10ma, ib=-1ma vbe(sat)2 - - -0.95 v ic=-50ma, ib=-5ma hfe1 60 - - - ic=-100ma, vce=-1v hfe2 80 - - - ic=-1ma, vce=-1v dc current gain(1) hfe3 100 - 300 - ic=-10ma, vce=-1v hfe4 60 - - - ic=-50ma, vce=-1v hfe5 30 - - - ic=-100ma, vce=-1v transition frequency ft 250 - - mhz vce =-20v, f=100mhz, ic=-10ma output capacitance cob - - 4.5 pf vcb =-5v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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